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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, N
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：205W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PN (L-Forming)
- Package / Case：TO-3P-3, SC-65-3, Formed Leads
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Overview
The FDA16N50LDTU is a 500V N-Channel MOSFET manufactured by Fairchild Semiconductor. It is optimized for discontinuous current mode power factor correction applications. The device utilizes advanced planar stripe DMOS technology tailored for avalanche and commutation modes, ensuring high efficiency in switch-mode power supplies.
Feature Summary
- Optimized for discontinuous current mode power factor correction
- Advanced planar stripe DMOS technology for high efficiency
- Tailored for avalanche and commutation mode operation
Applications
- Discontinuous current mode power factor correction
- High efficiency switch mode power supplies
Procurement Notes
Verify the manufacturer datasheet to confirm the specific electrical parameters and pinout configuration for the FDA16N50LDTU variant. Ensure compatibility with the intended thermal management and switching frequency requirements of the target application circuit before procurement.
Selection Notes
Select this component for designs requiring robust performance in discontinuous conduction mode PFC circuits. Consider the avalanche energy rating and switching characteristics when evaluating suitability for high-efficiency power conversion systems compared to standard general-purpose MOSFETs.
Part Context
This part belongs to the FDA series of N-Channel MOSFETs from Fairchild Semiconductor, designed specifically for power factor correction applications. It shares technological roots with other F-series devices but is distinctively optimized for discontinuous current mode operations.
Replacement Considerations
ON Semiconductor offers the FDA16N50-F109 as a comparable UniFET MOSFET with similar voltage and current ratings. Verify pinout and thermal specifications before substitution.
