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FDBL86366-F085 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 220A 8HPSOF. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDBL86366-F085
- Description：MOSFET N-CH 80V 220A 8HPSOF
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6320 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tj)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-HPSOF
- Package / Case：8-PowerSFN
Single FETs, MOSFETs datasheet and documents for FDBL86366-F085
Single FETs, MOSFETs Overview
The onsemi FDBL86366-F085 is an N-Channel Power Trench MOSFET designed for high-efficiency automotive applications. It features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 220 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 6.1 mΩ and operates within a junction temperature range of -55°C to +175°C. Packaged in an 8-HPSOF surface-mount format, it delivers 300 W power dissipation capability. This component holds AEC-Q101 qualification and PPAP capability, ensuring reliability for demanding automotive environments.
Single FETs, MOSFETs Feature Summary
- PowerTrench technology enables low on-resistance for improved efficiency
- AEC-Q101 qualified with PPAP capability for automotive standards
- Enhanced thermal performance via HPSOF package design
Single FETs, MOSFETs Applications
- Automotive engine control systems
- High-current DC-DC converter modules
- Motor drive circuits in electric vehicles
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix F085 matches your required reel or cut-tape packaging configuration. Confirm that the 8-HPSOF footprint aligns with your PCB layout constraints. Ensure compliance with RoHS and REACH directives as specified in the official datasheet before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when an 80 V rating and high current capacity are required in a compact surface-mount form factor. The low Rds(on) minimizes conduction losses in high-power density designs. Consider the thermal resistance characteristics of the HPSOF package for adequate heat sinking solutions in enclosed automotive enclosures.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's PowerTrench family of automotive-grade MOSFETs. It utilizes silicon technology optimized for low switching losses and robust avalanche energy handling. The HPSOF package provides superior thermal conductivity compared to standard SO-8 variants, supporting higher power densities in modern vehicle electronics architectures.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 80 V, 220 A, and 8-HPSOF specifications. Verify pinout compatibility and thermal resistance values. Cross-reference AEC-Q101 status if automotive qualification is mandatory for the target application environment.
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