FDC6320C

FET, MOSFET Arrays Overview

The onsemi FDC6320C is a dual complementary N- and P-channel enhancement mode MOSFET array housed in an SSOT-6 (SOT-363) surface-mount package. It features a drain-source breakdown voltage of 25 V. The N-channel continuous drain current is rated at 120 mA, while the P-channel is rated at 220 mA. The maximum drain-source on-resistance is specified as 10.6 Ohms for the N-channel and 4 Ohms for the P-channel. Gate-source voltage limits are ±8 V, with threshold voltages ranging from 650 mV to 1.5 V. Total power dissipation is 900 mW, operating within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual complementary configuration integrating both N-channel and P-channel transistors into a single compact footprint.
• Logic-level gate drive capability designed for low-voltage digital switching applications.
• Enhancement mode operation ensures defined off-state characteristics with zero gate bias.

FET, MOSFET Arrays Applications

• Low-side and high-side switching in portable battery-powered devices.
• Signal routing and level shifting in consumer electronics.
• General-purpose digital logic interface circuits.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status via official Material Composition Declarations. Validate part markings against datasheet specifications to prevent counterfeit infiltration during acquisition.

FET, MOSFET Arrays Selection Notes

Evaluate thermal management requirements based on the 900 mW power dissipation limit. Ensure gate drive voltages remain within the ±8 V absolute maximum rating. Compare on-resistance values against load current demands to verify acceptable conduction losses for the specific application context.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's portfolio of small-signal discrete semiconductors. It utilizes silicon technology for standard switching performance. The SSOT-6 package provides space-efficient integration for dual-transistor functions in mobile and handheld form factors.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter equivalence before considering alternative manufacturers or series.