FDC8602

FET, MOSFET Arrays Overview

The FDC8602 is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It is housed in an SOT-363 surface-mount package designed for space-constrained applications. The device features a drain-source voltage rating of 12V and a continuous drain current capacity of 4A at 25°C. Key electrical parameters include a maximum on-resistance of 22 milliohms at a gate-source voltage of 4.5V, ensuring efficient power switching with minimal conduction losses. The component operates within a junction temperature range of -55°C to 150°C and complies with AEC-Q101 automotive standards.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs in a single compact package
• Low on-resistance design optimized for high-efficiency power management applications
• Automotive grade qualification ensuring reliability under stringent environmental conditions

FET, MOSFET Arrays Applications

• Load switching in automotive infotainment systems
• Power distribution units in vehicle electronics
• Battery protection circuits in mobile devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm packaging type and tape/reel specifications. Confirm RoHS compliance status and lead-free material declarations against the latest manufacturer datasheet. Ensure the part number matches the exact pinout and thermal characteristics required for the target PCB layout.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required in a minimal footprint. Evaluate the 22 milliohm on-resistance against the expected load current to ensure thermal performance remains within safe operating limits. Consider the 12V voltage rating relative to the system supply voltage to prevent breakdown during transient events.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's portfolio of small-signal MOSFETs designed for portable and automotive electronics. It serves as a complementary solution to other low-voltage switching devices, offering integrated dual functionality to reduce board space and assembly complexity compared to using discrete single transistors.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the SOT-363 package, 12V Vdss, and comparable Rds(on) values. Verify pin compatibility and thermal resistance characteristics before substitution.