FDD3510H

FET, MOSFET Arrays Overview

The FDD3510H is a dual-channel MOSFET array manufactured by onsemi, featuring one N-channel and one P-channel logic-level field-effect transistor within a single TO-252 (DPAK) surface-mount package. The device supports a drain-source voltage of 80V for both channels. Continuous drain current ratings are specified at 4.3A for the N-channel and 2.8A for the P-channel at 25°C ambient temperature. Key electrical parameters include a maximum on-resistance of 80 milliohms at 10V gate drive with 4.3A current, a maximum gate threshold voltage of 4V at 250µA, and a maximum gate charge of 18nC at 10V. The component operates within a junction temperature range of -55°C to 150°C and dissipates up to 1.3W of power.

FET, MOSFET Arrays Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs in a common-drain configuration to reduce board space.
• Features logic-level gate thresholds enabling direct drive from standard digital logic outputs.
• Utilizes PowerTrench technology to achieve low on-state resistance for improved conduction efficiency.

FET, MOSFET Arrays Applications

• Synchronous rectification circuits in DC-DC converters
• Low-side and high-side switching in motor control systems
• Power management modules in portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance and specific lot traceability against the datasheet requirements. Check for moisture sensitivity level handling instructions during storage and reflow soldering processes to ensure reliability.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution requires paired N/P-channel switching capabilities. Ensure the application voltage remains below the 80V limit and current demands fit within the 4.3A and 2.8A continuous ratings. Consider the thermal performance of the TO-252 package and PCB copper area for adequate heat dissipation given the 1.3W power rating.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench series of MOSFETs from onsemi, designed for general-purpose power switching applications. It serves as an integrated alternative to discrete N and P-channel transistors, simplifying circuit design for bridge drivers and synchronous buck converters where space constraints are critical.

FET, MOSFET Arrays Replacement Considerations

Public records indicate End-of-Life notifications for this device. Verify if the base model FDD3510 or other compatible dual MOSFET arrays with matching voltage and current specifications are available as substitutes.