FDD6030L

Single FETs, MOSFETs Overview

The FDD6030L is a single N-channel PowerTrench MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 12 A at ambient temperature, or 50 A at case temperature. The device exhibits a typical on-resistance (Rds(on)) of 14.5 mΩ. It is housed in a DPAK surface-mount package with three pins. Key electrical characteristics include a gate charge of 26 nC at 5 V and a maximum power dissipation of 3.2 W at ambient temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes PowerTrench technology for optimized switching performance and low conduction losses.
• Designed for high-efficiency synchronous rectification applications due to low Rds(on).
• Surface-mount construction facilitates automated assembly and compact PCB layouts.

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Load switching circuits
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the manufacturer's datasheet to ensure compatibility with design requirements. Confirm that the ordering suffix matches the required tape-and-reel packaging configuration. Cross-reference the part number with official onsemi documentation to validate authenticity and technical specifications before integration into production systems.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 30 V rating with moderate current handling capabilities. The DPAK package offers a balance between thermal performance and board space efficiency. Ensure the drive circuit can supply sufficient gate charge to achieve the specified switching speeds without excessive heat generation in the system.

Single FETs, MOSFETs Part Context

This device belongs to the PowerTrench family of MOSFETs from onsemi, which are engineered for high-speed switching and low on-resistance. The FDD6030L specifically targets low-voltage power management solutions where efficiency and thermal management are critical constraints in consumer and industrial electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 30 V N-channel specification, DPAK package, and comparable Rds(on) values. Verify pinout compatibility and thermal resistance parameters when evaluating alternative manufacturers' components for equivalent performance.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current for the FDD6030L?

The maximum continuous drain current is 12 A at ambient temperature and 50 A at case temperature.

What is the typical on-resistance of this MOSFET?

The typical on-resistance (Rds(on)) is 14.5 mΩ.