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FDD6N25TF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 250V 4.4A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FDD6N25TF
- Description：MOSFET N-CH 250V 4.4A DPAK
- Series：UniFET™
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for FDD6N25TF
Single FETs, MOSFETs Overview
The FDD6N25TF is an N-channel UniFET MOSFET from onsemi, rated for a maximum drain-source voltage of 250 V and a continuous drain current of 4.4 A at case temperature. It features a maximum on-resistance of 1.1 Ω at VGS = 10 V. The device utilizes a TO-252AA (DPAK) surface-mount package with three pins. It operates within a junction temperature range of -55 °C to +175 °C.
Single FETs, MOSFETs Feature Summary
- UniFET technology providing enhanced switching performance
- High voltage capability suitable for power management applications
- Surface-mount DPAK package for efficient thermal dissipation
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power supply switching stages
- Motor control interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix TF against official datasheets to confirm pinout and packaging details. Ensure compatibility with existing PCB footprints for the TO-252AA form factor. Cross-reference electrical limits with system requirements before integration.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage applications requiring moderate current handling in a compact surface-mount format. Consider the 1.1 Ω RDS(on) for efficiency calculations in low-current switching scenarios. Evaluate thermal management needs given the package constraints.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's UniFET family, designed for general-purpose power switching. It complements other high-voltage MOSFETs in the portfolio, offering a balance between voltage rating and conduction loss for standard industrial and consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes like FDD6N25 or FQT4N25TF only if pinouts and electrical parameters match exactly. Verify package dimensions and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
