FDD8426H

$0.47

Description：MOSFET N/P-CH 40V 12A/10A TO252
Series：PowerTrench®

SKU:91fac1eb65a9 Category: FET, MOSFET Arrays Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

FDD8426H is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 40V 12A/10A TO252. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDD8426H

Description：MOSFET N/P-CH 40V 12A/10A TO252
Series：PowerTrench®
Mfr：onsemi
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：12A, 10A
Rds On (Max) @ Id, Vgs：12mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2735pF @ 20V
Power - Max：1.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package：TO-252 (DPAK)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FDD8426H

FDD8426H

FET, MOSFET Arrays Overview

The FDD8426H is a dual N and P-Channel enhancement mode Power MOSFET manufactured by onsemi using the PowerTrench process. It integrates an N-Channel (Q1) rated at 40 V, 12 A with a maximum rDS(on) of 12 mΩ at VGS = 10 V, and a P-Channel (Q2) rated at -40 V, -10 A with a maximum rDS(on) of 17 mΩ at VGS = -10 V. The device operates within a junction temperature range of -55°C to +150°C and features a TO-252-4L package.

FET, MOSFET Arrays Feature Summary

Dual configuration integrating separate N-Channel and P-Channel enhancement mode transistors in a single surface-mount package.
Advanced PowerTrench process technology designed to minimize on-state resistance while maintaining superior switching performance.
Logic-level gate drive capability allowing low-resistance operation at reduced gate-source voltages of 4.5 V.

FET, MOSFET Arrays Applications

Inverter circuits
H-Bridge motor control

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to historical counterfeiting risks associated with Fairchild Semiconductor products. Confirm RoHS compliance status and check for obsolete manufacturing status before integration into new designs.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring complementary N and P-channel switching in a compact form factor. Ensure thermal management accommodates the specified junction-to-case thermal resistance of 1.4 °C/W under continuous operating conditions.

FET, MOSFET Arrays Part Context

Originally developed by Fairchild Semiconductor, this part belongs to the PowerTrench family of power MOSFETs. Following corporate restructuring, the product line was acquired by onsemi, which now manages the datasheet and production lifecycle.