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FDG6304P-X is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDG6304P-X
- Description：MOSFET
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDG6304P-X
FET, MOSFET Arrays Overview
The FDG6304P-X is a dual P-channel enhancement-mode MOSFET manufactured by onsemi. It utilizes proprietary high cell density DMOS technology to achieve low gate charge, specified at 2.5 nC typical. The device features a breakdown voltage of 25 V and an on-resistance of 0.85 ohm. Each channel supports a continuous drain current of 410 mA. The components are housed in a compact SOT-363 (SC-70) package, designed for logic level operation.
FET, MOSFET Arrays Feature Summary
- Dual P-channel configuration utilizing high cell density DMOS technology
- Low gate charge characteristics for efficient switching
- Logic level enhancement mode operation
FET, MOSFET Arrays Applications
- Battery-powered portable electronics
- Power management circuits
- Load switching applications
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix, as the base model FDG6304P may differ from the FDG6304P-X variant regarding tape and reel specifications or environmental compliance. Confirm availability status directly with authorized distributors, as some sources indicate this specific part number may be discontinued or no longer manufactured. Ensure the requested quantity matches the packaging format required for your assembly process.
FET, MOSFET Arrays Selection Notes
Select this component when a dual P-channel switch is required in a minimal footprint. The 25 V rating suits low-voltage systems. Consider the 0.85 ohm on-resistance for power loss calculations. The SOT-363 package is suitable for space-constrained designs. Verify that the 410 mA current limit meets the load requirements of the application.
FET, MOSFET Arrays Part Context
This device belongs to onsemi's array of discrete field-effect transistors. It is part of the broader category of dual MOSFETs designed for integrated power solutions. The product line emphasizes miniaturization and efficiency through advanced DMOS processes, targeting modern consumer and industrial electronic devices requiring compact power control elements.
FET, MOSFET Arrays Replacement Considerations
Check for direct substitutes within the same series or compatible pin-out alternatives. Since the FDG6304P-X is noted as potentially discontinued, identify equivalent dual P-channel MOSFETs with matching 25 V ratings and similar Rds(on) values. Ensure any replacement maintains the SOT-363 package dimensions for board compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
