FET, MOSFET Arrays FDG6304P product image

FDG6304P

$0.71
  • Description:MOSFET 2P-CH 25V 0.41A SC88
  • Series:-

SKU:cd97b5afba07 Category: Brand:

  
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FDG6304P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 25V 0.41A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6304P

  • Description:MOSFET 2P-CH 25V 0.41A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:410mA
  • Rds On (Max) @ Id, Vgs:1.1Ohm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:62pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG6304P

FDG6304P

FET, MOSFET Arrays Overview

The FDG6304P is a dual P-Channel logic level enhancement mode field effect transistor manufactured by onsemi. It utilizes proprietary high cell density DMOS technology to achieve compact integration. The device features a maximum drain-source voltage of -25 V and continuous drain currents of ±410 mA. On-resistance is specified at 0.85 ohms. Power dissipation is rated at 300 mW in surface mount SC-70-6 packaging.

FET, MOSFET Arrays Feature Summary

  • Dual P-Channel configuration for space-efficient circuit design
  • Logic level enhancement mode operation for direct interface compatibility
  • Proprietary high cell density DMOS technology implementation

FET, MOSFET Arrays Applications

  • Battery protection circuits
  • Load switch applications
  • Power management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix, such as F169, against project requirements to ensure correct tape and reel specifications. Confirm package marking codes match datasheet documentation. Validate component authenticity through authorized distribution channels. Review environmental compliance data sheets for RoHS and REACH status prior to final procurement authorization.

FET, MOSFET Arrays Selection Notes

Select this component when dual P-Channel switching is required within tight spatial constraints. The 25 V rating suits low-voltage battery systems. Ensure thermal management strategies account for the 300 mW power dissipation limit. Verify gate drive voltages align with logic level thresholds for reliable enhancement mode activation during operation.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's discrete semiconductor transistor portfolio. It represents a specialized MOSFET array solution designed for integrated power management tasks. The product line emphasizes high cell density technologies to optimize performance within minimal footprint packages suitable for modern electronic assemblies.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Cross-reference with manufacturer obsolescence notices or official replacement guides before initiating design changes.

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