FDG6318P

FET, MOSFET Arrays Overview

The FDG6318P is a dual P-channel enhancement mode MOSFET from the PowerTrench series, manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 500 mA. The device has a maximum on-resistance of 1.2 Ω and operates within a temperature range of -55 °C to +150 °C. Packaged in a surface-mount SOT-363 (SC-70) housing with six pins, it dissipates up to 300 mW. Key electrical characteristics include a gate threshold voltage minimum of 0.65 V, a maximum gate-source voltage of ±12 V, and typical gate charge of 0.86 nC at 4.5 V.

FET, MOSFET Arrays Feature Summary

• Dual isolated P-channel configuration for efficient power switching applications
• Enhancement mode operation compatible with standard logic levels
• Surface-mount SOT-363 package optimized for space-constrained designs

FET, MOSFET Arrays Applications

• Low-side or high-side load switching in portable electronics
• Power management circuits for battery-operated devices
• General-purpose signal switching in consumer appliances

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and material composition details via official datasheets. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate part markings against manufacturer specifications to prevent counterfeit risks during assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when dual independent P-channel switching is required in minimal footprint designs. Consider the 1.2 Ω on-resistance for low-current applications where voltage drop is acceptable. Evaluate thermal performance based on the 300 mW power dissipation limit and ambient operating conditions. Ensure gate drive voltages remain within the ±12 V absolute maximum rating.

FET, MOSFET Arrays Part Context

The FDG6318P belongs to onsemi's PowerTrench family of silicon MOSFETs. This series emphasizes cost-effective solutions for general-purpose power switching. The dual configuration allows for synchronized control of two loads using a single package, reducing board space compared to discrete single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other dual P-channel MOSFETs in SOT-363 packages. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th). Check if alternative parts offer lower resistance or higher current ratings for specific design upgrades.