FET, MOSFET Arrays FDG6318PZ product image

FDG6318PZ

$0.44
  • Description:MOSFET 2P-CH 20V 0.5A SC88
  • Series:-

SKU:020b72cc5d63 Category: Brand:

  
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FDG6318PZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 0.5A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDG6318PZ

  • Description:MOSFET 2P-CH 20V 0.5A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:500mA
  • Rds On (Max) @ Id, Vgs:780mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.62nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:85.4pF @ 10V
  • Power - Max:300mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88 (SC-70-6)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDG6318PZ

FDG6318PZ

FET, MOSFET Arrays Overview

The FDG6318PZ is a dual P-channel enhancement-mode MOSFET from the PowerTrench series, manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 500 mA. The device utilizes a SC-70 (SOT-363) surface-mount package with six pins. Key electrical parameters include a maximum on-resistance of 1.2 Ω, a gate threshold voltage range starting at 0.65 V, and a typical gate charge of 0.86 nC at 4.5 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 300 mW.

FET, MOSFET Arrays Feature Summary

  • Dual independent P-channel configuration in a compact SC-70 package
  • Enhancement mode operation for low-voltage switching applications
  • High thermal stability supporting extended industrial temperature ranges

FET, MOSFET Arrays Applications

  • Low-side or high-side load switching in portable electronics
  • Battery protection circuits requiring compact form factors
  • General-purpose signal switching in consumer devices

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and material composition. Ensure that any variant selected matches the required RoHS compliance status and moisture sensitivity level for your assembly process. Cross-reference the part number with authorized distributors to confirm availability and authenticity before procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. The 20 V rating suits low-voltage systems, while the 500 mA current capacity limits suitability for higher-power loads. Evaluate the 1.2 Ω on-resistance to ensure acceptable conduction losses for the intended application current. Confirm that the SC-70 package dimensions fit the PCB layout constraints.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench family, which focuses on efficient power switching solutions. The FDG6318PZ specifically addresses the need for dual-channel control in space-constrained designs. It serves as a discrete alternative to integrated power switches where custom threshold or configuration flexibility is needed.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin-to-pin compatibility and electrical parameter equivalence with potential alternatives through official manufacturer cross-reference tools.

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