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FDMA1025P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 3.1A 6MICROFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMA1025P
- Description：MOSFET 2P-CH 20V 3.1A 6MICROFET
- Series：PowerTrench®
- Mfr：onsemi
- Package：Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.1A
- Rds On (Max) @ Id, Vgs：155mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：450pF @ 10V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VDFN Exposed Pad
- Supplier Device Package：6-MicroFET (2x2)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMA1025P
FET, MOSFET Arrays Overview
The FDMA1025P is a dual-channel P-channel MOSFET designed for battery charge switch applications in cellular handsets and ultra-portable devices. It features a single package solution with a 6-MicroFET configuration. The device supports a drain-source voltage of 20V and a continuous drain current of 3.1A. Key electrical characteristics include a fall time of 14 ns, a rise time of 14 ns, and a minimum forward transconductance of 6.2 S.
FET, MOSFET Arrays Feature Summary
- Single package solution optimized for battery charge switches
- Dual-channel P-channel MOSFET architecture
- Designed for ultra-portable and cellular handset applications
FET, MOSFET Arrays Applications
- Battery charge switches in cellular handsets
- Ultra-portable electronic device power management
- Portable consumer electronics power switching
FET, MOSFET Arrays Procurement Notes
Verify the specific manufacturer datasheet to confirm pinout compatibility and thermal performance requirements for your design. Ensure that the 20V rating and 3.1A current capacity align with your system's maximum load conditions. Cross-reference the 6-MicroFET package dimensions with your PCB layout constraints before finalizing component selection.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual-channel P-channel solution is required for portable power management. The low rise and fall times support efficient switching operations. Consider the forward transconductance value for drive strength requirements. This part is suitable for designs prioritizing space efficiency and integrated dual-switch functionality in mobile applications.
FET, MOSFET Arrays Part Context
This component belongs to onsemi's portfolio of discrete power devices tailored for mobile and portable electronics. It complements other power management solutions by providing integrated switching capabilities in a minimal footprint. The product line focuses on enhancing energy efficiency and reducing board space in next-generation handheld devices.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official cross-reference tools or manufacturer databases for compatible alternatives if supply chain constraints require substitution.
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