FDMA1027P

FET, MOSFET Arrays Overview

The FDMA1027P is a dual P-Channel PowerTrench MOSFET manufactured by onsemi. It integrates two independent P-channel enhancement mode field-effect transistors within a single package, designed for low-side switching applications. The device features a drain-source voltage rating of -20 V and a continuous drain current capability of -3 A at 25°C. Key electrical parameters include a maximum on-resistance (RDS(on)) of 120 mΩ at a gate-source voltage of -4.5 V. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-363 surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two P-channel MOSFETs for space-efficient circuit design
• Low on-resistance characteristics optimized for efficient power switching
• Enhancement mode operation with standard logic-level gate drive compatibility

FET, MOSFET Arrays Applications

• DC-DC converter output stages
• Load switch circuits
• Power management modules

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of discrete semiconductors from onsemi. The series is characterized by advanced trench technology aimed at minimizing conduction losses while maintaining robust performance in compact surface-mount packages suitable for modern electronic assemblies.

FET, MOSFET Arrays Replacement Considerations

Verify pinout compatibility and thermal resistance requirements when substituting. Equivalent parts must match the -20V / -3A specification and SOT-363 footprint. Check datasheets for RDS(on) limits and gate threshold voltages to ensure functional parity.