FDMA1028NZ-F021

FET, MOSFET Arrays Overview

The FDMA1028NZ-F021 is a dual N-channel enhancement mode MOSFET from the onsemi PowerTrench series. It features a maximum drain-source voltage of 20 V and a continuous drain current of 3.7 A. The device utilizes an MLP surface-mount package with six pins, measuring 2 mm by 2 mm with a height of 0.75 mm. Key electrical parameters include a maximum drain-source resistance of 90 mΩ, a gate threshold voltage minimum of 0.6 V, and a typical gate charge of 4 nC at 10 V. It supports a maximum power dissipation of 1.4 W and operates within a temperature range of -55 °C to +150 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration
• PowerTrench Technology
• MLP Surface-Mount Package

FET, MOSFET Arrays Applications

• Low Voltage DC-DC Converters
• Load Switching Applications
• Battery Protection Circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix F021 against official datasheets to confirm packaging details such as reel size or tape-and-reel specifications. Ensure compatibility with standard MLP footprint designs and check for RoHS compliance status in the latest manufacturer documentation before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low voltage switching with moderate current capabilities. The dual configuration allows for efficient bridge or high-side/low-side driving in compact spaces. Verify thermal management requirements given the 1.4 W power dissipation limit in the MLP package.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench family, known for optimized RDS(on) and gate charge characteristics. The MLP package provides improved thermal performance compared to traditional small outline packages while maintaining a compact footprint suitable for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference tools for equivalent dual N-channel MOSFETs with similar 20 V ratings and MLP packaging. Verify pinout compatibility and thermal characteristics when substituting.