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FDMA1032CZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 3.7A 6MICROFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMA1032CZ
- Description：MOSFET N/P-CH 20V 3.7A 6MICROFET
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.7A, 3.1A
- Rds On (Max) @ Id, Vgs：68mOhm @ 3.7A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：340pF @ 10V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-VDFN Exposed Pad
- Supplier Device Package：6-MicroFET (2x2)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMA1032CZ
FET, MOSFET Arrays Overview
The FDMA1032CZ is a dual-channel small-signal MOSFET featuring separate N-channel and P-channel elements within a single MicroFET-6 package. It supports a maximum drain-source voltage of 20 V and a continuous drain current of 3700 mA. The device utilizes silicon technology with a maximum on-resistance of 0.068 Ω. Designed for surface-mount installation, it operates without halogen content and complies with RoHS standards. The component integrates built-in diodes and offers ESD protection capabilities.
FET, MOSFET Arrays Feature Summary
- Dual-channel configuration combining N-channel and P-channel MOSFETs in one package
- Integrated ESD protection for enhanced signal integrity
- Built-in diodes included within the separate element structure
FET, MOSFET Arrays Applications
- Small-signal switching applications
- ESD protection circuits
- Low-voltage power management modules
FET, MOSFET Arrays Procurement Notes
Verify the manufacturer designation as Rochester Electronics rather than onsemi, as the source data attributes this specific part number to Rochester Electronics. Confirm the MicroFET-6 package dimensions and pinout compatibility with your PCB layout. Ensure the 20 V rating and 3.7 A current capacity meet your circuit requirements before procurement.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual MOSFET solution is required for low-voltage applications. The MicroFET-6 package provides space efficiency compared to discrete components. Verify that the 0.068 Ω resistance meets thermal constraints. Ensure the design accommodates the separate element configuration with built-in diodes.
FET, MOSFET Arrays Part Context
This component belongs to the category of discrete semiconductor transistors, specifically small-signal MOSFETs. It is categorized under silicon-based devices designed for general-purpose switching and signal processing tasks. The MicroFET-6 packaging indicates a specialized form factor intended for high-density board mounting.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's cross-reference tools or technical support for equivalent alternatives.
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