FET, MOSFET Arrays FDMB2308PZ product image

FDMB2308PZ

$2.41
  • Description:MOSFET 2P-CH 6MLP
  • Series:PowerTrench®

SKU:a08002e20e84 Category: Brand:

  
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FDMB2308PZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 6MLP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMB2308PZ

  • Description:MOSFET 2P-CH 6MLP
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual) Common Drain
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:36mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:3030pF @ 10V
  • Power - Max:800mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-WDFN Exposed Pad
  • Supplier Device Package:6-MLP (2x3)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMB2308PZ

FDMB2308PZ

FET, MOSFET Arrays Overview

The FDMB2308PZ is a dual P-channel MOSFET array in a WDFN6 package. It features a -20V drain-source voltage and continuous drain current of -7A per channel, with a pulsed current rating of -30A. The device offers a maximum on-resistance of 36 milliohms at VGS = -4.5V. Power dissipation is rated at 2.2W. Designed for low gate charge and capacitance to minimize driver losses, it supports bidirectional current flow via common drain configuration.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel MOSFETs configured as common drain for bidirectional current flow
  • Optimized for low conduction losses through minimized RDS(on)
  • Low gate charge and capacitance reduce driver power consumption
  • Single package solution designed for battery pack protection circuits

FET, MOSFET Arrays Applications

  • Li-Ion battery pack protection circuits
  • Ultra-portable electronic applications
  • Smart doorbells and security cameras
  • AR/VR/XR headsets

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the necessary voltage and current ratings for the target circuit design. Ensure compliance with environmental standards such as RoHS if applicable. Cross-reference datasheet parameters against system requirements before finalizing procurement decisions.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact dual P-channel switching with low on-resistance. The WDFN6 package suits space-constrained designs. Evaluate thermal performance based on the 2.2W dissipation rating. Consider the -20V limit when designing for higher voltage systems.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's PowerTrench series, utilizing advanced process technology for efficient switching. It serves as a single-package alternative to discrete components, simplifying PCB layout for portable devices and battery management systems requiring dual-channel control.

FET, MOSFET Arrays Replacement Considerations

Check pinout compatibility and electrical specifications against existing designs. Verify package dimensions for mechanical fit. Ensure substitute parts meet the same voltage, current, and resistance criteria.

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