FDMC6890NZ

FET, MOSFET Arrays Overview

The FDMC6890NZ is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a 20V drain-source voltage (Vds) and supports a continuous drain current (Id) of 4A. The device offers low on-resistance, specified as 68 mΩ at 4A/4.5V and 100 mΩ under other standard conditions. Key electrical parameters include a gate-source threshold voltage (Vgs(th)) of 600 mV, maximum gate charge (Qg) of 3.4 nC, and input capacitance (Ciss) of 270 pF. It operates within a temperature range of -55°C to +150°C junction temperature, with power dissipation rated at 1.92W. The component utilizes a MicroFET 3x3mm surface-mount package.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs in a single compact package for space-efficient circuit designs.
• Logic Level Gate Drive: Optimized for direct drive from logic-level signals, featuring a low gate threshold voltage for efficient switching.
• Low On-Resistance: Provides reduced conduction losses through optimized PowerTrench technology, enhancing thermal performance.
• High Temperature Stability: Designed for reliable operation across an extended junction temperature range suitable for demanding environments.

FET, MOSFET Arrays Applications

• Battery protection circuits requiring dual-switch isolation
• DC-DC converter synchronous rectification stages
• Load switching applications in portable electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer source, as historical records indicate Fairchild Semiconductor production prior to the onsemi merger. Confirm RoHS compliance status directly with the supplier documentation. Check for obsolescence notices or lifecycle changes, as some sources list this part as nearing end-of-life. Ensure the package type matches the required MicroFET 3x3mm footprint for PCB integration.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required for low-voltage, high-current applications. The 20V rating suits 3.3V and 5V systems. Consider the 4A current limit and 1.92W power dissipation for thermal management. Verify that the 68 mΩ on-resistance meets efficiency targets. Ensure the design accommodates the specific gate charge requirements for switching speed optimization.

FET, MOSFET Arrays Part Context

The FDMC6890NZ belongs to the PowerTrench family of MOSFETs, known for low Rds(on). It was originally produced by Fairchild Semiconductor before the company became part of onsemi. The 'NZ' suffix typically denotes lead-free and halogen-free packaging compliant with environmental standards. This part is distinct from single-channel variants in the same series.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives from onsemi's current portfolio. Verify if newer revisions of the FDMC6890 series offer improved thermal characteristics. Ensure any substitute maintains the 20V Vds and 4A Id ratings. Confirm package compatibility with the existing MicroFET 3x3mm footprint.