FDMC7208S

FET, MOSFET Arrays Overview

The FDMC7208S is a dual N-channel PowerTrench MOSFET manufactured by onsemi. It features a PQFN-8 (Power-33-8) surface-mount package designed for high-efficiency power switching applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) ranging from 12 A to 16 A depending on thermal conditions. The device exhibits low on-resistance (Rds(on)) values between 6.4 mΩ and 9 mΩ, with a gate threshold voltage (Vgs(th)) of 1.2 V. Gate charge (Qg) varies from 18 nC to 36 nC. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.9 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact PowerTrench package
• Low on-resistance for improved conduction efficiency
• Enhancement mode operation with defined gate threshold characteristics

FET, MOSFET Arrays Applications

• DC-DC converter circuits
• Load switch applications
• Power management systems

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix or tape-and-reel quantity against the manufacturer's latest datasheet before ordering. Confirm that the PQFN-8 footprint matches the target PCB design. Ensure compliance with RoHS directives if required by the end product specifications. Cross-reference the part number with authorized distributors to confirm authenticity and traceability.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required in a small form factor. The 30 V rating suits low-voltage DC systems. Evaluate thermal performance carefully as the 1.9 W power dissipation limit may require adequate copper area for heat sinking. Compare Rds(on) values at the intended gate drive voltage to ensure sufficient current handling capability for the specific load requirements.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's PowerTrench series, which focuses on low-loss power MOSFETs. The FDMC7208S utilizes silicon technology and is part of a broader portfolio of discrete power devices. It is distinct from integrated drivers or PMICs, serving specifically as a standalone switching element in power stages.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same 30 V dual N-channel PQFN-8 category. Verify that any substitute maintains equal or lower Rds(on) and compatible gate charge characteristics to ensure circuit stability without redesign.