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FDMC8030 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 40V 12A 8PWR33. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMC8030
- Description：MOSFET 2N-CH 40V 12A 8PWR33
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：12A
- Rds On (Max) @ Id, Vgs：10mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1975pF @ 20V
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-Power33 (3x3)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMC8030
FET, MOSFET Arrays Overview
The FDMC8030 is a P-channel PowerTrench MOSFET from onsemi, designed for high-efficiency power switching applications. It features an 8V drain-source voltage rating and a continuous drain current of 12A at room temperature. The device utilizes advanced trench technology to achieve low on-resistance, specifically 4.5 milliohms at a gate drive of 4.5 volts. Packaged in a compact DFN5x6 footprint, it offers thermal performance suitable for space-constrained designs. Key electrical characteristics include a maximum gate threshold voltage of 1 volt and a total gate charge of 7 nanocoulombs, ensuring fast switching speeds and minimal conduction losses in DC-DC converter circuits.
FET, MOSFET Arrays Feature Summary
- Advanced trench technology enables low specific on-resistance for improved efficiency.
- Ultra-low gate charge facilitates fast switching transitions and reduces driver loss.
- Enhanced avalanche ruggedness supports robust operation under transient conditions.
FET, MOSFET Arrays Applications
- DC-DC converters
- Power management ICs
- Load switches
FET, MOSFET Arrays Procurement Notes
Verify the exact ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance standards required for your region. Check for any recent lifecycle notices or obsolescence warnings directly from onsemi before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component when a low-voltage, high-current P-channel solution is required. Ensure the operating junction temperature remains within specified limits during peak load conditions. Verify that the gate drive voltage aligns with the 4.5V threshold for optimal Rds(on) performance. Consider thermal resistance values for proper heatsinking or PCB copper area allocation.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's PowerTrench family, which focuses on low on-resistance MOSFETs. The DFN5x6 package provides a balance between current handling capability and board space efficiency. It serves as a drop-in replacement for various legacy P-channel devices in similar voltage and current classes.
FET, MOSFET Arrays Replacement Considerations
Consult onsemi's official cross-reference tools for verified substitutes. Ensure any alternative maintains compatible pinout, voltage ratings, and thermal characteristics. Validate that substitute parts meet the same automotive or industrial qualification standards if applicable.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
