FDMD8280

FET, MOSFET Arrays Overview

The FDMD8280 is a dual N-channel enhancement mode MOSFET manufactured by onsemi using Silicon technology. It features an 80V drain-source breakdown voltage and a continuous drain current of 40A. The device exhibits a maximum on-resistance of 8.2 mΩ at 10V gate drive. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation rating of 38W. The component utilizes a PQFN-12 package and includes the Power Clip trademark configuration.

FET, MOSFET Arrays Feature Summary

• Dual N-channel architecture for synchronized switching applications
• Power Clip trademark packaging design for enhanced thermal performance
• Enhancement mode operation with low gate threshold voltage

FET, MOSFET Arrays Applications

• Synchronous buck converters
• Motor control circuits
• DC-DC power conversion systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS and REACH compliance documentation availability prior to integration. Validate package integrity upon receipt as the component may have limited supply chain support. Ensure storage conditions meet manufacturer specifications to prevent degradation during handling.

FET, MOSFET Arrays Selection Notes

Evaluate thermal management requirements given the 38W power dissipation limit in the PQFN-12 package. Compare gate charge characteristics against driving capabilities for optimal switching efficiency. Assess PCB layout constraints associated with the specific footprint dimensions. Consider alternative components if long-term supply continuity is critical for the product lifecycle.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's discrete power transistor portfolio utilizing Silicon MOSFET technology. It is part of the broader PowerTrench or similar high-efficiency switching series designed for compact power solutions. The PQFN-12 form factor supports surface-mount assembly for space-constrained electronic designs requiring robust current handling capabilities.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify electrical compatibility including Vds, Id, and Rds(on) values when selecting alternatives. Ensure pinout correspondence and thermal resistance parameters match existing board layouts.