FET, MOSFET Arrays FDMD8560L product image

FDMD8560L

$4.25
  • Description:MOSFET 2N-CH 60V 22A 8PWR 5X6
  • Series:PowerTrench®

SKU:e1a1d5abf3a0 Category: Brand:

  
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FDMD8560L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 60V 22A 8PWR 5X6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMD8560L

  • Description:MOSFET 2N-CH 60V 22A 8PWR 5X6
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:22A, 93A
  • Rds On (Max) @ Id, Vgs:3.2mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:128nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:11130pF @ 30V
  • Power - Max:2.2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:8-Power 5x6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMD8560L

FDMD8560L

FET, MOSFET Arrays Overview

The FDMD8560L is a dual N-Channel PowerTrench MOSFET manufactured by onsemi. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 22A. The device exhibits a low on-resistance of 5.4 mΩ per channel, with a gate threshold voltage of 1V and total gate charge of 92nC. Electrical characteristics include a maximum gate-source voltage range of ±20V, power dissipation of 2.2W, and operating temperatures from -55°C to +150°C. Switching performance specifies rise and fall times of 15ns and 11ns respectively, alongside a minimum forward transconductance of 98S.

FET, MOSFET Arrays Feature Summary

  • Dual configuration integrating two independent N-channel enhancement mode transistors within a single package for space-efficient circuit design.
  • PowerTrench technology architecture engineered to minimize conduction losses through optimized silicon cell density.

FET, MOSFET Arrays Applications

  • Low-side switching in DC-DC converter topologies
  • Motor control driver circuits requiring dual-channel isolation
  • Load switch applications in portable electronic devices

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm RoHS compliance status via Material Composition Declarations. Ensure the specific ordering suffix matches the required packaging format, as variations exist between reel, cut tape, and MouseReel configurations.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a compact Power-56-8 footprint. Evaluate thermal management requirements based on the 2.2W power dissipation limit. Compare the 5.4mΩ on-resistance against system efficiency targets and ensure the 60V rating exceeds the maximum operational drain-source voltage.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench family of discrete semiconductors produced by onsemi. It utilizes Silicon technology and is housed in an SMD/SMT Power-56-8 package. The product line focuses on high-efficiency switching solutions for power management applications.

FET, MOSFET Arrays Replacement Considerations

The FDMS86500L is a related single-channel variant within the same series offering comparable voltage ratings but different current and resistance specifications.

FDMD8560LFDMD8560L
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