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FDME1023PZT is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.6A 6MICROFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDME1023PZT
- Description：MOSFET 2P-CH 20V 2.6A 6MICROFET
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.6A
- Rds On (Max) @ Id, Vgs：142mOhm @ 2.3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：405pF @ 10V
- Power - Max：600mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-MicroFET (1.6x1.6)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDME1023PZT
FET, MOSFET Arrays Overview
The FDME1023PZT is a dual P-channel PowerTrench MOSFET array by onsemi, housed in a 6-pin MicroFET (1.6x1.6 mm) package. It features a maximum drain-source voltage of -20V and a continuous drain current of 2.6A. The device includes logic-level gate drive capability for direct interface with standard logic signals. Designed for low on-resistance and efficient switching, it supports applications requiring compact power management solutions.
FET, MOSFET Arrays Feature Summary
- Dual P-Channel configuration in a single ultra-small footprint
- Logic-level gate drive compatibility
- Optimized for low on-resistance performance
FET, MOSFET Arrays Applications
- Battery charge switch circuits in cellular handsets
- Ultra-mobile device power management
- Portable electronics load switching
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'PZT' corresponds to the tape-and-reel packaging format required for automated assembly. Confirm that the 6-pin MicroFET dimensions align with the target PCB land pattern. Ensure the -20V rating meets the system's maximum voltage stress requirements under all operating conditions.
FET, MOSFET Arrays Selection Notes
Select this component when space constraints necessitate a dual P-channel solution in a 1.6x1.6 mm package. It is suitable for applications requiring logic-level control without additional gate drivers. Consider the 2.6A current rating against peak load demands and thermal dissipation limits within the enclosed device environment.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's PowerTrench MOSFET family, designed for high-efficiency switching in portable devices. The FDME1023PZT specifically addresses the need for integrated dual-channel power switches in mobile phone battery protection and charging circuits, replacing discrete components to save board area.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers or series.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
