FDMS0309AS_SN00347

Single FETs, MOSFETs Overview

The FDMS0309AS_SN00347 is a single N-channel PowerTrench SyncFET manufactured by onsemi. It utilizes silicon technology and features an 8-PowerTDFN (5x6 mm) surface-mount package with a maximum height of 1.1 mm. Key electrical specifications include a drain-source breakdown voltage (Vds) of 30 V, a continuous drain current (Id) of 21 A at case temperature, and a low on-resistance (Rds(on)) of 3.5 mΩ at Vgs = 10 V. The device operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Integrated synchronous rectification design optimized for high efficiency in power conversion topologies.
• Low thermal resistance construction supporting robust heat dissipation in compact form factors.
• Enhanced switching performance characteristics suitable for high-frequency operation.

Single FETs, MOSFETs Applications

• Point-of-load (POL) DC/DC converters
• Synchronous rectification in isolated power supplies
• High-efficiency AC-DC adapters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix _SN00347 against official onsemi documentation to confirm it denotes a standard production variant or a specific tape-and-reel configuration. Ensure the component matches the 8-PowerTDFN footprint and that the datasheet parameters align with your circuit requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring a 30 V rated N-channel MOSFET with minimal conduction losses. The low Rds(on) value supports efficient power management in space-constrained applications. Confirm that the gate charge and threshold voltage specifications are compatible with the intended driver circuitry for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the FDMS03 series from onsemi, which focuses on low-voltage power MOSFETs. The series is engineered for high-density power applications, leveraging advanced trench technology to deliver superior performance compared to traditional planar devices. It is part of the broader PowerTrench portfolio designed for modern energy-efficient electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with FDMS0309AS for functional equivalence. Verify pinout compatibility and thermal characteristics when substituting. Ensure any alternative component meets the same 30 V rating and package dimensions to maintain board integrity.