FET, MOSFET Arrays FDMS3602AS product image

FDMS3602AS

$0.38
  • Description:MOSFET 2N-CH 25V 15A/26A POWER56
  • Series:PowerTrench®

SKU:0e912d6800c7 Category: Brand:

  
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FDMS3602AS is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 15A/26A POWER56. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDMS3602AS

  • Description:MOSFET 2N-CH 25V 15A/26A POWER56
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:15A, 26A
  • Rds On (Max) @ Id, Vgs:5.6mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1770pF @ 13V
  • Power - Max:2.2W, 2.5W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:Power56
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDMS3602AS

FDMS3602AS

FET, MOSFET Arrays Overview

The FDMS3602AS is a PowerTrench Power Stage asymmetric dual N-channel MOSFET manufactured by onsemi. It integrates two N-channel devices in a single Power-56-8 (PowerClip) surface-mount package. The component features a drain-source breakdown voltage of 25 V and operates within an ambient temperature range of -55°C to +150°C. Key electrical parameters include a maximum continuous drain current of 15 A for one channel and 30 A for the other, with corresponding on-resistances of 5.6 mΩ and 1.6 mΩ. The gate-source voltage rating is ±20 V, and the device supports enhancement mode operation.

FET, MOSFET Arrays Feature Summary

  • Asymmetric dual configuration integrating two distinct N-channel MOSFETs within a single compact package.
  • PowerClip technology providing low thermal resistance and high current handling capabilities via direct copper bonding.
  • Optimized for synchronous rectification applications with low gate charge and fast switching characteristics.

FET, MOSFET Arrays Applications

  • Synchronous rectification in DC-DC converters
  • Low voltage power management circuits
  • Point-of-load regulation modules

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'AS' against the official datasheet to confirm pinout and electrical tolerances. Confirm end-of-life status as distribution data indicates potential obsolescence. Ensure compatibility with Power-56-8 footprint during procurement planning.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring asymmetric current sharing in low-voltage synchronous rectifier topologies. Evaluate thermal performance based on the combined power dissipation of both channels within the shared PowerClip package. Verify gate drive requirements align with the specified threshold voltages.

FET, MOSFET Arrays Part Context

This part belongs to the FDMS series of asymmetric dual MOSFETs from onsemi, formerly Fairchild Semiconductor. It utilizes the PowerTrench process technology optimized for low Rds(on) and efficient switching. The PowerClip package variant offers superior thermal performance compared to standard leaded packages.

FET, MOSFET Arrays Replacement Considerations

FDMS3600AS: Similar 25V asymmetric dual N-channel MOSFET in Power-56-8 package; verify specific Rds(on) values and current ratings match design requirements before substitution.

FDMS3602ASFDMS3602AS
$0.38
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