FDMS3602S

FET, MOSFET Arrays Overview

The FDMS3602S is a dual N-channel PowerTrench MOSFET from onsemi, housed in a Power-56-8 (PowerClip) surface-mount package. It features a 25 V drain-source voltage rating and an asymmetric configuration with distinct channel characteristics. The device supports continuous drain currents of 49 A and 17 A for its respective channels, with low on-resistances of 1.5 mΩ and 3.5 mΩ. Operating within a temperature range of -55°C to +150°C, it utilizes enhancement mode technology and includes integrated thermal sensing capabilities for advanced power management.

FET, MOSFET Arrays Feature Summary

• Asymmetric dual N-channel architecture optimized for mixed-load applications
• Integrated thermal diode for accurate junction temperature monitoring
• Low profile PowerClip package design for enhanced thermal dissipation
• Highly efficient switching performance suitable for synchronous rectification

FET, MOSFET Arrays Applications

• Notebook DC/DC converter circuits
• Gaming console power distribution networks
• Desktop motherboard VRM phases
• Server and storage system power regulation

FET, MOSFET Arrays Procurement Notes

Verify the specific revision status and RoHS compliance documentation directly with onsemi or authorized distributors before integration. Confirm that the Power-56-8 footprint matches the target PCB layout requirements. Ensure that the asymmetric current ratings align with the specific load conditions of the intended circuit design to prevent overstress.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution requires two independent N-channel switches with different current handling capabilities within a single package. The integrated thermal sensor makes it suitable for designs requiring precise over-temperature protection without external sensing resistors. Compare against standard symmetric duals if identical channel performance is not required.

FET, MOSFET Arrays Part Context

This part belongs to the FDMS series of PowerTrench MOSFETs, which are engineered for high-density power conversion. The PowerClip packaging technology distinguishes these devices by providing superior thermal conductivity compared to traditional leaded packages. This specific model represents an asymmetric variant designed to optimize board space and cost in multi-rail power systems.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible replacements may include other asymmetric dual N-channel MOSFETs in the Power-56-8 package, such as the FDMS3600S. Verify that substitute parts meet or exceed the 25 V breakdown voltage and match the thermal resistance specifications to ensure reliable operation in existing designs.