ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FDMS3610S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 25V 17.5A POWER56. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDMS3610S
- Description：MOSFET 2N-CH 25V 17.5A POWER56
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：17.5A, 30A
- Rds On (Max) @ Id, Vgs：5mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1570pF @ 13V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：Power56
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDMS3610S
FET, MOSFET Arrays Overview
The FDMS3610S is a dual N-Channel PowerTrench MOSFET manufactured by onsemi, designed for gaming, notebook, and server applications. It utilizes silicon technology in a Power-56-8 SMD package. The device features a drain-source breakdown voltage (Vds) of 25 V and continuous drain currents (Id) ranging from 30 A to 60 A depending on the specific channel configuration. The on-resistance (Rds On) varies between 2.1 mOhms and 5.4 mOhms. Gate-source voltage limits are ±12 V with threshold voltages between 1.2 V and 1.4 V. Total gate charge (Qg) ranges from 26 nC to 59 nC. Operating temperatures span from -55°C to +150°C, with power dissipation rated at 2.2 W to 2.5 W.
FET, MOSFET Arrays Feature Summary
- Dual enhancement-mode N-Channel configuration within a single compact package
- Optimized low on-resistance for efficient power stage performance
- Fast switching characteristics suitable for high-frequency applications
FET, MOSFET Arrays Applications
- Gaming hardware power management
- Notebook computer DC-DC conversion
- Server power distribution networks
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Request original datasheets and compliance certificates to confirm specifications. Inspect packaging integrity upon receipt. Validate lot codes against official records. Ensure handling procedures meet ESD standards during installation.
FET, MOSFET Arrays Selection Notes
Evaluate thermal requirements against the specified power dissipation limits. Confirm compatibility with the 25 V system voltage. Check gate drive levels against the ±12 V maximum rating. Consider the dual-channel layout for space-constrained designs. Verify package footprint matches the Power-56-8 specification.
FET, MOSFET Arrays Part Context
This component belongs to onsemi's PowerTrench series, focusing on low Rds(ON) performance. It serves as a discrete solution for power switching in portable and stationary electronics. The dual-channel design allows for interleaved operation or independent control paths within a single footprint.
FET, MOSFET Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support for current equivalent recommendations given the obsolete status.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
