FDMS3615S

FET, MOSFET Arrays Overview

The FDMS3615S is a dual N-Channel PowerTrench MOSFET manufactured by onsemi. It utilizes enhancement mode technology within a Power-56-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 25 V and a gate-source voltage range of ±20 V. Continuous drain current (Id) ratings are specified at 16 A and 18 A, with corresponding on-resistance (Rds(on)) values of 5.8 mΩ and 3.4 mΩ. Gate charge (Qg) ranges from 19 nC to 31 nC, while fall times vary between 1.4 ns and 2.2 ns. The component operates within a temperature range of -55°C to +150°C, with power dissipation capabilities of 1 W and 2.3 W.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration for synchronized rectification applications
• PowerTrench technology optimized for low on-resistance and fast switching
• Enhancement mode operation with defined threshold voltage characteristics

FET, MOSFET Arrays Applications

• Gaming and desktop computer power systems
• Notebook NVDC and server power architectures
• General-purpose synchronous rectification circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and revision level against the official datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status through manufacturer documentation. Check availability as the product lifecycle status may indicate end-of-life or limited supply conditions. Validate package dimensions and pinout against ECAD models before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component based on the required 25 V rating and dual-channel topology. Evaluate thermal management needs considering the specified power dissipation limits in the Power-56-8 package. Compare gate charge and on-resistance values against system efficiency targets. Ensure the driving circuit can support the required gate voltage levels and switching speeds for optimal performance.

FET, MOSFET Arrays Part Context

The FDMS3615S belongs to onsemi's PowerTrench series, designed for high-efficiency power conversion. It shares the Power-56-8 package form factor with other devices in the family, facilitating board layout standardization. This dual MOSFET structure supports compact designs in portable and computing power applications requiring synchronized switching.

FET, MOSFET Arrays Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same package. Verify electrical parameters such as Rds(on), Vds, and Qg match or exceed original specifications. Ensure thermal characteristics and package dimensions remain compatible with existing footprints.