FDQ7236AS

FET, MOSFET Arrays Overview

The FDQ7236AS is a dual N-channel PowerTrench MOSFET array in a 14-SOIC package, designed to replace two single SO-8 devices. It integrates a high-side switch (Q1) optimized for switching losses and a low-side switch (Q2) utilizing SyncFET technology with an integrated Schottky diode to reduce conduction losses. Q2 supports 14 A continuous drain current with an RDS(on) of 8.7 mΩ at VGS=10V. Q1 supports 11 A with an RDS(on) of 13.2 mΩ at VGS=10V. Both switches feature a 30V drain-source voltage rating and operate within a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Monolithic integration of a MOSFET with a Schottky diode on the low-side switch to minimize reverse recovery effects.
• Asymmetric internal design optimizing the high-side switch for reduced switching losses and the low-side switch for lower conduction resistance.
• Logic-level gate threshold enabling efficient drive from standard control voltages.

FET, MOSFET Arrays Applications

• DC-to-DC power supplies
• Notebook power management systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to counterfeiting risks. Confirm the specific ordering suffix matches the required tape and reel quantity of 2500 units. Ensure the device marking corresponds to the specified part number before integration into production lines.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints prevent using discrete SO-8 packages. The asymmetric configuration requires matching the circuit topology to the specific strengths of Q1 and Q2. Verify thermal management capabilities against the provided junction-to-ambient resistance values for the target PCB copper pad area.

FET, MOSFET Arrays Part Context

This device belongs to the PowerTrench series by Fairchild Semiconductor, now part of onsemi. It represents a transition point where Fairchild's proprietary SyncFET technology was combined with standard PowerTrench logic for compact power solutions.

FET, MOSFET Arrays Replacement Considerations

FDQ7236A

FET, MOSFET Arrays FAQ

What is the primary difference between the internal Q1 and Q2 switches?

Q1 is optimized for reducing switching losses as the high-side switch, while Q2 utilizes SyncFET technology with an integrated Schottky diode to reduce conduction losses as the low-side switch.

How does the SyncFET technology affect the body diode performance?

The embedded Schottky diode in Q2 exhibits significantly improved reverse recovery characteristics compared to a standard MOSFET body diode, reducing switching losses during freewheeling periods.