FET, MOSFET Arrays FDR8508P product image

FDR8508P

$0.37
  • Description:MOSFET 2P-CH 30V 3A SUPERSOT-8
  • Series:PowerTrench®

SKU:8ab609919914 Category: Brand:

  
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FDR8508P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 30V 3A SUPERSOT-8. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDR8508P

  • Description:MOSFET 2P-CH 30V 3A SUPERSOT-8
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3A
  • Rds On (Max) @ Id, Vgs:52mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:750pF @ 15V
  • Power - Max:800mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-LSOP (0.130", 3.30mm Width)
  • Supplier Device Package:SuperSOT™-8
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDR8508P

FDR8508P

FET, MOSFET Arrays Overview

The FDR8508P is a dual P-channel MOSFET array from onsemi's PowerTrench series, housed in a SuperSOT-8 surface-mount package. It features a drain-source voltage (Vdss) of -30 V and a continuous drain current (Id) of -3 A at 25°C. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 52 mΩ at Vgs = -10 V and Id = -3 A. Key electrical parameters include a gate threshold voltage (Vgs(th)) max of -3 V, total gate charge (Qg) max of 12 nC at Vgs = -5 V, and input capacitance (Ciss) max of 750 pF at Vds = -15 V. Maximum power dissipation is 800 mW, with an operating junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration within a compact SuperSOT-8 package for space-constrained designs.
  • Logic-level gate drive capability allowing direct interface with standard logic outputs.
  • Optimized low on-resistance characteristics to minimize conduction losses in switching applications.

FET, MOSFET Arrays Applications

  • Load switching circuits
  • Motor driver interfaces
  • Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete when sourcing this part number. Confirm that the manufacturer has officially discontinued production. Ensure any replacement strategy accounts for the end-of-life status and availability constraints associated with legacy inventory.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a dual P-channel switch with a 30 V rating and 3 A continuous current capacity. Evaluate thermal performance against the 800 mW power dissipation limit and 156 °C/W junction-to-ambient thermal resistance. Verify compatibility with the required logic voltage levels given the -3 V maximum gate threshold specification.

FET, MOSFET Arrays Part Context

This component belongs to the FDR85 base product line manufactured by onsemi. It utilizes the PowerTrench technology platform designed for efficient power switching. The device is packaged in the SuperSOT-8 form factor, which provides a small footprint suitable for high-density surface mount assembly.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, verify functional equivalents through official manufacturer cross-reference lists or authorized distributor databases.

FDR8508PFDR8508P
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