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FDS3812 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 80V 3.4A 8SOIC. Review the specifications below when checking this part for your BOM.
The FDS3812 is an N-Channel Dual PowerTrench MOSFET designed to improve DC/DC converter efficiency. It features a drain-source voltage of 80 V and continuous drain current of 3.4 A. The static drain-source on-resistance is 74 mΩ at VGS = 10 V and 84 mΩ at VGS = 6 V. Total gate charge is typically 13 nC. Operating junction temperature ranges from -55°C to +175°C. Thermal resistance junction-to-ambient is 78°C/W on a 1 in² pad.
Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm the package marking matches the datasheet specifications. Ensure the component status is active if new production is required. Check for RoHS compliance markings on the reel or tape. Validate the ordering suffix against the specific quantity requirements.
Select this dual MOSFET when space constraints require two switches in one package. Consider the 80V rating and 3.4A current limit for the load requirements. Evaluate the thermal resistance values against the PCB copper area available. Compare the gate charge specifications against the driving capability of the controller IC.
This component belongs to the PowerTrench family of MOSFETs developed by Fairchild Semiconductor. The device utilizes trench technology to achieve low on-resistance. It is packaged in an SO-8 format suitable for surface mount applications. The dual structure integrates two independent N-channel devices.
Check for direct replacements within the onsemi portfolio that maintain the 80V, 3.4A, and SO-8 specifications. Verify pin compatibility and thermal characteristics before substitution.
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