FDS6812A

FET, MOSFET Arrays Overview

The FDS6812A is a dual N-channel logic level MOSFET manufactured using the PowerTrench process. It features a 20 V drain-source voltage rating and a continuous drain current of 6.7 A. The device offers an on-resistance of 22 mΩ at VGS = 4.5 V and 35 mΩ at VGS = 2.5 V. Typical gate charge is 12 nC, with a maximum gate-source voltage of ±12 V. Operating junction temperature ranges from -55°C to +150°C. Thermal resistance is 78°C/W (junction-to-ambient) and 40°C/W (junction-to-case).

FET, MOSFET Arrays Feature Summary

• Logic level operation optimized for low-voltage PWM applications.
• PowerTrench technology minimizes on-state resistance while maintaining fast switching performance.
• Low gate charge reduces drive power requirements.

FET, MOSFET Arrays Applications

• Low voltage battery powered systems.
• DC-DC converter circuits requiring fast switching.
• Motor control applications utilizing PWM signals.

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches SO-8 standards. Review thermal management requirements based on specific board copper pad dimensions, as thermal resistance varies significantly with mounting surface area.

FET, MOSFET Arrays Selection Notes

Select this component when low on-resistance at logic-level gate voltages is required. Ensure the application operates within the 20 V drain-source limit. Consider thermal dissipation capabilities if operating near the 6.7 A continuous current rating or in high ambient temperatures.

FET, MOSFET Arrays Part Context

Originally developed by Fairchild Semiconductor, this part belongs to the PowerTrench family of MOSFETs. The product line focuses on minimizing conduction losses through advanced trench technology. Distribution and documentation may now be managed by onsemi following industry acquisitions.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents such as the FDS6912A, which shares similar dual N-channel architecture but differs in voltage and current ratings. Verify pinout compatibility and electrical parameters before substitution.

FET, MOSFET Arrays FAQ

What is the typical gate charge for the FDS6812A?

The typical total gate charge (Qg) is 12 nC under standard test conditions.

How does the on-resistance vary with gate voltage?

RDS(on) is specified as 22 mΩ at VGS = 4.5 V and increases to 35 mΩ at VGS = 2.5 V.

What is the maximum allowable gate-source voltage?

The absolute maximum rating for gate-source voltage (VGSS) is ±12 V.