FDS6912A

FET, MOSFET Arrays Overview

The FDS6912A is a dual N-channel logic level MOSFET manufactured by onsemi using the PowerTrench process. It features a SOIC-8 surface-mount package with two independent channels. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 6 A. The on-state resistance (Rds(on)) is specified at 28 mΩ at Vgs = 10 V and 35 mΩ at Vgs = 4.5 V. The gate-source voltage range is ±20 V, with a typical threshold voltage of 1 V. Gate charge (Qg) is 8.1 nC, and power dissipation (Pd) is 1.6 W. Operating temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact SOIC-8 package
• Logic level operation suitable for low-voltage control
• PowerTrench technology for minimized on-state resistance

FET, MOSFET Arrays Applications

• Low voltage battery powered applications
• DC-DC converter synchronous rectification
• Load switching circuits

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Check RoHS compliance documentation for material composition requirements. Confirm package integrity upon receipt. Validate part markings against official datasheet specifications. Ensure storage conditions meet semiconductor handling standards to prevent degradation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel isolation in a small footprint. Consider the 30 V rating and 6 A current capacity for low-power DC applications. Evaluate thermal management needs given the 1.6 W power dissipation limit in SOIC-8 packaging. Verify gate drive compatibility with the 1 V threshold voltage for efficient logic-level switching.

FET, MOSFET Arrays Part Context

The FDS6912A belongs to onsemi's PowerTrench MOSFET family, originally developed by Fairchild Semiconductor. This series emphasizes low on-resistance and fast switching performance. The device represents a transition point in onsemi's discrete MOSFET portfolio following industry consolidation. It serves as a standard solution for dual-channel low-voltage power management tasks.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in verified sources. Cross-reference with other dual N-channel 30 V 6 A MOSFETs only after verifying pinout compatibility and electrical parameter equivalence. Consult manufacturer documentation for specific replacement recommendations.