FDS6982AS_G

FET, MOSFET Arrays Overview

The FDS6982AS_G is a dual N-channel PowerTrench MOSFET array manufactured by onsemi, housed in an 8-SOIC surface-mount package. It integrates two distinct transistors optimized for synchronous DC-DC power supplies: Q1 (6.3A) and Q2 (8.6A). Key electrical parameters include a maximum drain-source voltage of 30V. At VGS = 10V, the typical on-resistance is 0.028Ω for Q1 and 0.015Ω for Q2. The device features low gate charge (Qg max 12nC @ 5V) and high input capacitance (Ciss max 2040pF @ 10V), supporting efficient power conversion with a maximum power dissipation of 900mW and an operating junction temperature range of -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Integrates two unique N-channel logic level MOSFETs into a single compact package to replace discrete components.
• Utilizes PowerTrench technology to achieve extremely low on-resistance for enhanced power conversion efficiency.
• Designed specifically for synchronous rectification applications in battery-powered electronic devices.

FET, MOSFET Arrays Applications

• Synchronous DC-DC power supplies for notebook computers
• Peripheral voltage rail generation in portable electronics
• Battery-powered device power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix G against official datasheets to confirm packaging or compliance variations. Confirm component status as discontinued if sourcing from primary channels. Ensure compatibility with existing PCB footprints and thermal requirements during replacement planning.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require dual MOSFET integration in low-voltage synchronous rectifier designs. Evaluate the distinct current ratings of Q1 and Q2 to match specific high-side and low-side load requirements within the power stage topology.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench and SyncFET series from onsemi, formerly Fairchild Semiconductor. It represents a consolidation strategy where dual discrete MOSFETs are replaced by a single integrated solution to reduce board area and parasitic inductance in portable power systems.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and parameter equivalence before considering alternative dual N-channel MOSFET arrays.