FET, MOSFET Arrays FDS6982S product image

FDS6982S

  • Description:MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
  • Series:PowerTrench®, SyncFET™

SKU:27f9a7c4451e Category: Brand:

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FDS6982S is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDS6982S

  • Description:MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
  • Series:PowerTrench®, SyncFET™
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:6.3A, 8.6A
  • Rds On (Max) @ Id, Vgs:28mOhm @ 6.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:2040pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDS6982S

FDS6982S

FET, MOSFET Arrays Overview

The FDS6982S is a dual N-channel PowerTrench SyncFET designed for synchronous DC/DC power supplies in notebook computers and battery-powered devices. It integrates two unique MOSFETs: Q1 optimized for low switching losses with a typical gate charge of 8.5 nC, and Q2 optimized for conduction losses featuring an integrated Schottky diode. The device operates at 30V with continuous drain currents of 6.3A (Q1) and 8.6A (Q2). Key electrical parameters include RDS(on) values of 0.028Ω (Q1) and 0.016Ω (Q2) at VGS=10V. It utilizes an SO-8 surface mount package with a junction temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Integrates two distinct N-channel MOSFETs into a single SO-8 package to replace discrete components
  • Features SyncFET technology embedding a Schottky diode within the low-side switch (Q2)
  • Optimizes high-side switch (Q1) for reduced switching losses via low gate charge
  • Optimizes low-side switch (Q2) for minimized conduction losses

FET, MOSFET Arrays Applications

  • Synchronous DC/DC power supplies for notebook computers
  • Peripheral voltage regulation in battery-powered electronic devices

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or manufacturer channels. Confirm the specific revision level matches design requirements. Check for lead time variations due to manufacturing updates. Ensure proper handling procedures are followed during assembly to prevent electrostatic discharge damage.

FET, MOSFET Arrays Selection Notes

Select this component when space constraints require replacing two discrete MOSFETs and a Schottky diode. Consider the specific thermal resistance characteristics based on PCB copper pad size. Evaluate the trade-off between Q1's switching performance and Q2's conduction efficiency for the target application load.

FET, MOSFET Arrays Part Context

The FDS6982S belongs to the PowerTrench and SyncFET product families from Fairchild Semiconductor, now part of onsemi. It represents a consolidation strategy for portable electronics power management, reducing board footprint while maintaining high efficiency standards required for mobile computing applications.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.

FDS6982SFDS6982S

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