FDS8947A

FET, MOSFET Arrays Overview

The FDS8947A is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a -30 V drain-source voltage rating and supports a continuous drain current of -4.0 A. The device achieves an on-resistance (RDS(ON)) of 0.052 Ω at VGS = -10 V and -4 A, or 0.080 Ω at VGS = -4.5 V and -3.2 A. Operating within a temperature range of -55°C to 150°C, it utilizes high-density cell design for low inline power loss. Available in SO-8, SOT-23 SuperSOT-6, and SOT-223 packages, the component is designed for fast switching performance.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration integrated into surface mount packages
• High density cell design for extremely low RDS(ON)
• Superior switching performance with fast turn-on and turn-off times
• Suitable for low voltage applications requiring resistance to transients

FET, MOSFET Arrays Applications

• Notebook computer power management
• Battery powered circuits
• Low voltage load switching

FET, MOSFET Arrays Procurement Notes

Verify the specific package variant required, as the FDS8947A is available in multiple form factors including SO-8, SOT-23 SuperSOT-6, and SOT-223. Confirm that the selected part matches the intended thermal dissipation requirements and board layout constraints. Ensure compatibility with the driving circuit's gate voltage levels, particularly if operating near the -4.5 V threshold condition.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel switching in a compact footprint. Evaluate the thermal resistance characteristics based on the chosen package and copper pad area. Consider the gate charge and capacitance values when designing drive circuits for high-frequency operation. Verify that the maximum pulsed drain current requirements do not exceed the specified limits under single-pulse conditions.

FET, MOSFET Arrays Part Context

This component belongs to the Fairchild Semiconductor (now onsemi) family of P-Channel enhancement mode power field effect transistors. These devices are produced using proprietary high cell density DMOS technology tailored to minimize on-state resistance. The series is engineered for efficiency in battery-powered systems where low in-line power loss and transient resistance are critical design parameters.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the -30 V rating, dual P-channel topology, and compatible pinout. Verify that substitute components offer equivalent RDS(ON) values at the target gate drive voltages (-10 V and -4.5 V). Ensure the replacement package maintains similar thermal resistance properties to avoid derating issues in the existing design.