FDW2508PB

FET, MOSFET Arrays Overview

The FDW2508PB is a dual P-channel MOSFET from Fairchild Semiconductor, utilizing PowerTrench technology. It features a maximum drain-source voltage of -12V and continuous drain current of -6A. The device specifies low on-resistance at various gate voltages: 18mΩ max at VGS=-4.5V/ID=-6A, 22mΩ max at VGS=-2.5V/ID=-5A, and 30mΩ max at VGS=-1.8V/ID=-4A. Packaged in a TSSOP-8, it includes thermal resistance values of 80°C/W (dual) and 125°C/W (single) junction-to-ambient. Electrical characteristics include a breakdown voltage of -12V and total gate charge of 45nC max.

FET, MOSFET Arrays Feature Summary

• Optimized for battery power management with extremely low on-resistance via trench technology
• Low profile TSSOP-8 package design
• RoHS compliant construction

FET, MOSFET Arrays Applications

• Power management systems
• Load switch circuits
• Battery protection modules

FET, MOSFET Arrays Procurement Notes

Verify the component status as obsolete or full production through official Fairchild Semiconductor channels before procurement planning. Confirm the specific ordering suffix matches the required reel size and tape width specifications. Ensure compatibility with the TSSOP-8 package dimensions and pinout configuration for your PCB layout requirements.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual P-channel switching with low voltage operation. Evaluate the on-resistance specifications against your load current and gate drive voltage constraints. Consider the thermal resistance parameters for heat dissipation needs in single or dual operation modes within the specified temperature range.

FET, MOSFET Arrays Part Context

This part belongs to the PowerTrench MOSFET family designed for low-voltage power applications. It represents an evolution in trench technology aimed at reducing conduction losses. The dual configuration allows for compact designs in portable electronics where space is limited and efficient power handling is critical.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify functional equivalence with other dual P-channel MOSFETs if sourcing this obsolete part is not feasible.