FDZ1827NZ

FET, MOSFET Arrays Overview

The FDZ1827NZ is a P-Channel Power MOSFET manufactured by Fairchild Semiconductor, belonging to the UniFET-II family. It features a drain-source voltage (Vdss) of -30 V and a continuous drain current (Id) of -14 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 15 mΩ at Vgs = -10 V and Id = -14 A. Gate charge (Qg) is typically 16 nC at Vgs = -10 V. It is housed in a TO-220F-3 package with a maximum power dissipation of 40 W at case temperature.

FET, MOSFET Arrays Feature Summary

• UniFET-II technology provides low on-state resistance for efficient power handling.
• Optimized gate charge characteristics support high-speed switching performance.
• Robust avalanche energy rating ensures reliability under transient stress conditions.

FET, MOSFET Arrays Applications

• DC-DC converters
• Load switches
• Power management circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer part number against official Fairchild or ON Semiconductor datasheets to confirm specifications. Ensure the component matches the required TO-220F-3 package and electrical ratings for your specific circuit design before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring a -30 V P-Channel MOSFET with low Rds(on). Verify that the thermal management solution supports the 40 W power dissipation rating at the intended case temperature. Confirm compatibility with standard logic-level or higher gate drive voltages.

FET, MOSFET Arrays Part Context

This component is part of the UniFET-II series, designed for general-purpose power switching. It utilizes planar stripe DMOS technology to minimize on-resistance while maintaining high avalanche strength. The TO-220F-3 package facilitates through-hole mounting for effective heat dissipation in industrial and consumer electronics.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other -30 V P-Channel MOSFETs in the TO-220F-3 package. Verify pinout compatibility and ensure equivalent or superior Rds(on), Qg, and avalanche energy ratings are met by any substitute part.

FET, MOSFET Arrays FAQ

What is the typical gate charge for the FDZ1827NZ?

The typical gate charge is 16 nC when measured at a gate-source voltage of -10 V.

Is the FDZ1827NZ avalanche tested?

Yes, devices in this UniFET-II family are typically 100% avalanche tested to ensure robustness.

What is the maximum power dissipation at case temperature?

The maximum power dissipation is rated at 40 W when measured at the case temperature.