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FEP6DT-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 200V 6A TO-220-3. Review the specifications below when checking this part for your BOM.
Diode Arrays specifications for FEP6DT-E3/45
- Description：DIODE ARRAY GP 200V 6A TO-220-3
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：200 V
- Current - Average Rectified (Io) (per Diode)：6A
- Voltage - Forward (Vf) (Max) @ If：975 mV @ 3 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：35 ns
- Current - Reverse Leakage @ Vr：5 µA @ 200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220-3
- Grade：-
- Qualification：-
Diode Arrays datasheet and documents for FEP6DT-E3/45
Diode Arrays Overview
The FEP6DT-E3/45 is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a glass passivated chip junction and is housed in a TO-220AB package with three pins. The device supports a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 6.0 A per diode at a case temperature of 105 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 0.975 V at 3.0 A, a maximum DC reverse current of 50 µA at 100 °C, and an ultrafast reverse recovery time of 35 ns. The component operates within a junction temperature range of -55 °C to +150 °C.
Diode Arrays Feature Summary
- Ultrafast recovery time for high efficiency and low switching losses
- Glass passivated chip junction for enhanced reliability
- High forward surge capability with a peak non-repetitive current rating of 75 A
Diode Arrays Applications
- High frequency rectification in switching mode power supplies
- Inverter circuits
- Freewheeling diodes
- DC-to-DC converters
Diode Arrays Procurement Notes
Verify the specific suffix against official documentation to confirm package type and grade. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure thermal management aligns with the specified derating curves for the intended operating environment.
Diode Arrays Selection Notes
Select this component for applications requiring fast switching speeds and low leakage currents. Evaluate the thermal resistance from junction to case to ensure adequate heat dissipation under load. Verify that the 200 V reverse voltage rating exceeds the peak circuit voltages to prevent breakdown during operation.
Diode Arrays Part Context
This part belongs to the FEP(F,B)6AT through FEP(F,B)6DT series of dual common-cathode ultrafast rectifiers. The series offers various voltage ratings from 50 V to 200 V across different suffixes (AT, BT, CT, DT). All variants share similar mechanical dimensions and electrical performance profiles, differing primarily in their maximum repetitive peak reverse voltage capabilities.
Diode Arrays Replacement Considerations
FEP6BT-E3/45
Diode Arrays FAQ
What is the maximum repetitive peak reverse voltage for the FEP6DT-E3/45?
The maximum repetitive peak reverse voltage (VRRM) for the FEP6DT variant is 200 V.
Does the FEP6DT-E3/45 meet automotive standards?
No, the standard E3 suffix indicates consumer grade. Automotive-grade versions are available with the HE3 suffix, which are AEC-Q101 qualified.
What is the typical reverse recovery time for this component?
The typical maximum reverse recovery time (trr) is 35 ns.
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