Single FETs, MOSFETs FF06100G product image

FF06100G

$6.94
  • Description:SICFET N-CH 650V 20.6A PDFN8x8
  • Series:Falcon
  • Mfr:fastSiC
  • Package:Tape & Reel (TR)

SKU:2f5cdc4deadc Category: Brand:

  
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FF06100G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 20.6A PDFN8x8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FF06100G

  • Description:SICFET N-CH 650V 20.6A PDFN8x8
  • Series:Falcon
  • Mfr:fastSiC
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:20.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):18V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 10A, 18V
  • Vgs(th) (Max) @ Id:2.2V @ 14mA
  • Gate Charge (Qg) (Max) @ Vgs:43 nC @ 15 V
  • Vgs (Max):18V
  • Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):83W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:4-PDFN (8x8)
  • Package / Case:4-PowerTSFN

Single FETs, MOSFETs datasheet and documents for FF06100G

FF06100G

Single FETs, MOSFETs Overview

The FF06100G is a Silicon Carbide MOSFET from the Falcon Series, rated at 650V with a maximum Drain-Source Voltage of 750V. It features a typical Drain-Source On-State Resistance (RDS(on)) of 100 mΩ and supports a continuous drain current of 20.6 A at 25°C case temperature. The device operates within a junction and storage temperature range of -55 to 175°C. Key electrical parameters include a total gate charge of 43 nC, an avalanche energy rating of 300 mJ, and a power dissipation capacity of 83 W at 25°C case temperature.

Single FETs, MOSFETs Feature Summary

  • Optimized on-state resistance combined with rapid switching behavior for high efficiency.
  • Clean Kelvin-source pin-out design compatible with standard gate drivers.
  • Low profile packaging options designed to minimize parasitic inductance.
  • High avalanche endurance capability suitable for demanding power applications.

Single FETs, MOSFETs Applications

  • Switching Mode Power Supplies
  • Power Factor Correction and DC/DC Converters
  • EV Charging Stations
  • Motor Drivers
  • Renewable Energy Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the FF06100G designation corresponds to the PDFN 8x8 package. Confirm that the application environment remains within the specified thermal limits and voltage ratings. Ensure compatibility with recommended gate drive voltages between 15V and 18V. Check for any updates in the preliminary datasheet revision history regarding switching or thermal characteristics before finalizing the design.

Single FETs, MOSFETs Selection Notes

Select this component when a 650V SiC MOSFET with low RDS(on) is required for compact power designs. The PDFN 8x8 package offers a low-profile solution for space-constrained layouts. Consider the 100 mΩ on-resistance and 20.6 A continuous current rating for load requirements. Evaluate the thermal impedance and derating curves to ensure adequate heat dissipation for the intended operating conditions.

Single FETs, MOSFETs Part Context

The FF06100 belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. This series is engineered to provide higher system efficiency and enable high-frequency operation. The product line includes multiple package options, including TOLL, PDFN 8x8, and TO-263-7L, to accommodate various power density and mounting requirements.

Single FETs, MOSFETs Replacement Considerations

Datasheet references comparable products available through manufacturer contact but does not list specific substitute part numbers. Verify pinout compatibility and thermal performance if substituting with devices from other manufacturers.

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