FF06320A

$2.16

Description：SICFET N-CH 650V 8.8A TO-252
Series：Falcon
Mfr：fastSiC
Package：Tape & Reel (TR)

SKU:538be854ea64 Category: Single FETs, MOSFETs Brand: fastSiC

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Product introduction

FF06320A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 8.8A TO-252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FF06320A

Description：SICFET N-CH 650V 8.8A TO-252
Series：Falcon
Mfr：fastSiC
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：320mOhm @ 2A, 18V
Vgs(th) (Max) @ Id：1.6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 15 V
Vgs (Max)：18V
Input Capacitance (Ciss) (Max) @ Vds：317.5 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FF06320A

FF06320A

Single FETs, MOSFETs Overview

The FF06320A is a Silicon Carbide (SiC) MOSFET from the Falcon Series by Fast SiC Semiconductor Inc., housed in a TO-252 (DPAK) package. It features a drain-source voltage of 650V and a maximum rating of 750V, with an on-state resistance of 320mΩ at VGS=18V. The device supports a continuous drain current of 8.6A at 25°C case temperature and handles a pulse current of 37A. Key electrical parameters include a total gate charge of 14.5nC, output capacitive charge of 12.7nC, and a junction-to-case thermal resistance of 3.65 K/W. Operating temperatures range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Optimized RDS(on) combined with rapid switching behavior for high efficiency
Low profile and low parasitic inductance packaging design
High avalanche endurance capability for robust operation
Compatible with standard gate drivers for ease of integration

Single FETs, MOSFETs Applications

Switching Mode Power Supply
Power Factor Correction
Portable Adaptor
Telecom Power
Renewable Energy Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'A' corresponds to the TO-252 DPAK package variant as documented in the datasheet. Confirm that the component status aligns with the preliminary release date of June 2021. Ensure compatibility with recommended operating values, specifically the gate-source turn-on voltage range of 15V to 18V. Check for RoHS compliance and halogen-free status requirements for your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and compact system designs. The low profile SMT package facilitates automated assembly. Consider the thermal derating curves when designing for case temperatures above 25°C to maintain safe continuous drain current levels. The device is suitable for high-frequency operations due to its optimized capacitance characteristics and fast switching times.

Single FETs, MOSFETs Part Context

This part belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. The series includes variants such as the FF06320B in a PQFN 5x6 package. These devices are designed to replace silicon MOSFETs, offering superior performance in terms of switching speed and conduction losses while maintaining ruggedness under harsh electrical conditions.

Single FETs, MOSFETs Replacement Considerations

The datasheet does not list specific public substitute part numbers. Designers should evaluate pin-compatible alternatives based on matching voltage ratings, on-resistance, and package dimensions. Verify that any replacement device meets the same thermal and electrical specifications required for the original application.