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Product Detailed Parameters
- Description：IGBT MODULE 1700V 1200A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 1.2kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：A-IHV130-3
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1700 A
- Power - Max：6600 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：110 nF @ 25 V
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Overview
The FF1200R17KE3B2NOSA1 is a dual IGBT module from Infineon Technologies, utilizing IGBT3-E3 technology. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 1200 A at TC = 80°C. The typical collector-emitter saturation voltage (VCE sat) is 2.00 V at Tvj = 25°C. The module includes an integrated diode with a forward voltage (VF) of 1.80 V at Tvj = 25°C. Total power dissipation reaches 6.60 kW at TC = 25°C. The package utilizes an AlSiC baseplate with internal AlN insulation, providing an isolation test voltage of 4.0 kV RMS.
Feature Summary
- Dual topology integrating IGBT and diode within a single housing
- AlSiC baseplate construction for enhanced thermal management
- Internal AlN basic insulation layer ensuring high isolation strength
Applications
- Industrial inverter systems
- Medium voltage drive applications
- High-power motor control units
Procurement Notes
Verify the exact ordering suffix against official manufacturer documentation to confirm specific manufacturing lot attributes or regional compliance variations. Confirm that the component matches the required technical specifications for your circuit design before procurement. Ensure sourcing channels are authorized to guarantee product authenticity and traceability.
Selection Notes
Select this module for applications requiring high voltage blocking capability and substantial continuous current handling. Evaluate the thermal resistance values provided in the datasheet to ensure adequate heatsinking. Consider the gate charge and switching energy parameters when designing the driver circuitry to optimize performance and minimize losses.
Part Context
This component belongs to the IGBT3-E3 series, representing a generation of insulated gate bipolar transistors designed for industrial power electronics. The series focuses on balancing switching speed and conduction losses for robust operation in demanding environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer cross-reference guides for compatible alternatives.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 2400 A for a pulse duration of 1 ms.
What is the short-circuit withstand capability?
The module can withstand a short-circuit current (ISC) of 4800 A at Tvj = 125°C for a pulse duration of up to 10 µs.
What is the stray inductance of the module?
The module stray inductance (LsCE) is specified as 20 nH.
