FF1200R17KP4B2NOSA2

Overview

The FF1200R17KP4B2NOSA2 is a dual IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 3 diode. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (ICDC) of 1200 A at TC = 80°C, with a repetitive peak collector current (ICRM) of 2400 A. The typical collector-emitter saturation voltage (VCEsat) is 1.80 V at Tvj = 25°C. The integrated diode has a forward voltage (VF) of 1.60 V at Tvj = 25°C. The module uses an AlSiC base plate for enhanced thermal cycling capability and provides 4 kV AC insulation. Operating junction temperature ranges from -40°C to 150°C.

Feature Summary

• Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 3 diode for optimized switching performance
• AlSiC base plate construction designed to increase thermal cycling capability and power density
• Extended operating junction temperature range up to 150°C
• Enlarged diode structure specifically engineered for regenerative operation

Applications

• High-power converters
• Medium-voltage drives
• Motor drives
• Traction drives
• Wind turbines

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing lot or packaging variations. Confirm that the component matches the IHM-A housing standard and AlSiC baseplate specification required for your thermal management design. Ensure compatibility with the specified mounting torque values for M6 and M4/M8 terminals during assembly.

Selection Notes

Select this module for applications requiring high voltage blocking capability and robust thermal cycling resistance. The AlSiC substrate offers superior mechanical stability compared to traditional copper substrates under high power density conditions. Verify that the gate drive circuitry supports the specified internal gate resistor and charge requirements for optimal switching times.

Part Context

This component belongs to the IHM-A module family featuring IGBT4 technology. It is part of Infineon's industrial grade portfolio designed for demanding power conversion environments. The module integrates both the IGBT switch and the anti-parallel diode in a single chassis mount package, simplifying system integration for three-phase inverter legs.

Replacement Considerations

Direct replacements must match the 1700 V rating, 1200 A current capacity, and IHM-A footprint. Verify if alternative modules utilize compatible AlSiC baseplates and similar switching characteristics to ensure thermal and electrical performance parity without redesigning the gate drive or cooling system.