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The FF1400R17IP4BOSA1 is a PrimePACK™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 1400 A at TC = 100°C. The repetitive peak collector current reaches 2800 A for 1 ms pulses. Typical saturation voltage (VCEsat) is 1.75 V at Tvj = 25°C, rising to 2.80 V at 150°C. Gate-emitter peak voltage is ±20 V. The module includes an integrated NTC thermistor with a rated resistance of 5.0 kΩ at 25°C. Maximum junction temperature under switching conditions is 150°C.
Verify the component authenticity by checking the UL approval mark (E83335) and RoHS compliance status on the physical module label. Confirm the production datecode and serial number match the shipping documentation. Ensure the ordering suffix BOSA1 corresponds to the specific material and manufacturing requirements defined by Infineon Technologies for this part number.
Select this module for high-power applications requiring 1700 V blocking capability and 1400 A continuous current handling. Consider the thermal resistance values (RthJC) and the maximum operating junction temperature of 150°C when designing the cooling system. Verify that the gate drive circuitry supports the specified ±20 V peak voltage and internal gate resistor characteristics.
This component belongs to the Infineon PrimePACK™3 series, utilizing Trench/Fieldstop IGBT4 technology. It is designed as a half-bridge module containing one IGBT switch and one anti-parallel diode. The package features a copper baseplate and high creepage/clearance distances suitable for industrial environments.
FF1400R17IP4