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The FF1500R12IE5PBPSA1 is a dual IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT5 and Emitter Controlled 5 diode technology. It features a PrimePACK™3+ B-series housing with pre-applied thermal interface material. The collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current (ICDC) of 1500 A at TH = 55°C and Tvj max = 175°C. The repetitive peak collector current (ICRM) reaches 3000 A for 1 ms. The maximum operating junction temperature (Tvj op) is 175°C. Key electrical parameters include a typical VCE(sat) of 1.70 V at Tvj = 25°C and an internal gate resistor (RGint) of 0.6 Ω.
Verify the exact ordering suffix against official documentation to confirm specific packaging or variant details. Ensure compatibility with existing cooling solutions due to the pre-applied TIM. Confirm that the mounting torque specifications align with your mechanical design requirements before finalizing procurement orders.
Select this module for high-power density applications requiring extended temperature operation. Consider the 1200 V rating and 1500 A continuous current capacity when designing the thermal management system. Evaluate the stray inductance and switching losses relative to the specific gate resistance values used in the drive circuit.
This component belongs to the PrimePACK™3+ B-series modules featuring Trench/Fieldstop IGBT5 technology. It represents a high-performance solution designed for industrial and renewable energy sectors. The series emphasizes high power cycling capability and compact integration within modern power conversion architectures.
Public confirmed substitute part numbers are not available in the provided datasheet.