FF150R12KS4HOSA1

$102.57

Description：IGBT MOD 1200V 225A 1250W
Series：C

SKU:2a8670ca6e9f Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 225A 1250W
Series：C
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：2 Independent
Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 150A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：225 A
Power - Max：1250 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：11 nF @ 25 V

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FF150R12KS4HOSA1

Overview

The FF150R12KS4HOSA1 is a dual IGBT module from Infineon Technologies, utilizing the IGBT2 Fast technology within a standard 62mm C-Series housing. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 150 A at TC = 75°C, extending to 225 A at TC = 25°C. The repetitive peak collector current (ICRM) reaches 300 A for 1 ms pulses. Typical saturation voltage (VCEsat) is 3.20 V at Tvj = 25°C and 3.70 V at Tvj = 125°C. Total power dissipation (Ptot) is rated at 1250 W. The integrated diode exhibits a forward voltage (VF) of 2.00 V at 25°C. Operating junction temperature ranges from -40°C to +125°C.

Feature Summary

Fast switching characteristics enabled by IGBT2 technology for high-frequency applications
High short-circuit capability with self-limiting short-circuit current
Isolated copper base plate providing electrical insulation
Positive temperature coefficient for collector-emitter saturation voltage

Applications

High frequency switching applications
Motor drives and servo drives
Resonant inverter applications
Uninterruptible Power Supply (UPS) systems
Medical applications

Procurement Notes

Verify the specific ordering suffix HOSA1 against official documentation to confirm material content and compliance details. Ensure that the component matches the required isolation test voltage and thermal resistance specifications for the intended mounting configuration. Cross-reference the datasheet revision date to validate technical parameters before integration into designs.

Selection Notes

Select this module for designs requiring robust performance in resonant or high-frequency inverter topologies. Evaluate the thermal resistance values (RthJC and RthCH) to ensure adequate heat sinking solutions are implemented. Confirm that the gate drive circuitry accommodates the specified internal gate resistor and charge requirements for optimal switching performance.

Part Context

This component belongs to the 62mm C-Series module family produced by Infineon Technologies. It utilizes silicon-based IGBT2 Fast technology designed specifically for high-frequency switching operations. The module integrates both an IGBT switch and a freewheeling diode in a single half-bridge configuration, suitable for industrial power conversion systems.