SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF1800R17IP5P is a PrimePACK™3+ B-series IGBT module featuring Trench/Fieldstop IGBT5 technology and an Emitter Controlled 5 diode. It includes pre-applied thermal interface material (TIM). Key electrical ratings include a collector-emitter voltage (VCES) of 1700 V, continuous DC collector current (ICDC) of 1800 A at TH = 38°C, and repetitive peak collector current (ICRM) of 3600 A. The saturation voltage (VCEsat) ranges from 1.75 V to 2.90 V depending on junction temperature. Switching losses are specified with turn-on energy (Eon) up to 725 mJ and turn-off energy (Eoff) up to 780 mJ at Tvj = 175°C. Thermal resistance from junction to heatsink is 26.3 K/kW for the IGBT and 43.4 K/kW for the diode.
Verify the specific suffix 'BPSA1' against official Infineon documentation to confirm if it denotes a distinct variant or packaging configuration compared to the base model. Ensure compliance with RoHS directives and check for any export control restrictions applicable to this component class before finalizing procurement orders.
Select this module for applications requiring high current density and low switching losses. Verify that the gate drive circuitry supports the required ±15 V levels and internal gate resistor values. Confirm that the cooling system can maintain the junction temperature within the -40°C to 175°C operational range under maximum load conditions.
This component belongs to the PrimePACK™3+ B-series, designed for industrial and traction applications. It utilizes Infineon's IGBT5 technology combined with Emitter Controlled 5 diodes to optimize performance. The module integrates an NTC thermistor for temperature monitoring and features a copper baseplate for efficient heat dissipation.
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific thermal resistance or switching characteristics of the IGBT5 technology.