ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MOD 1200V 295A 1050W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：295 A
- Power - Max：1050 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
Download product information
Overview
The FF200R12KE3B2HOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3-E3 technology. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 295 A at 25°C. The saturation voltage is typically 1.70 V at 25°C for a 200 A load. Total power dissipation reaches 1050 W at 25°C case temperature. Operating junction temperatures range from -40°C to +125°C. The module weighs 340 g and utilizes an IS5a (62 mm)-7 package.
Feature Summary
- Incorporates Trenchstop IGBT3-E3 technology for optimized switching performance
- Features a copper baseplate with internal Al2O3 basic insulation
- Includes integrated NTC thermistor for thermal monitoring
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific B2 suffix against official documentation to confirm its exact impact on electrical parameters or packaging configuration. Ensure compatibility with standard M6 mounting screws and verify that the required gate drive voltages align with the specified ±20 V peak limit before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high current density within a 62 mm footprint. Evaluate the thermal resistance values against the expected heat sink capabilities to maintain junction temperatures within the specified operational limits during continuous operation.
Part Context
This part belongs to the FF200R12 series of IGBT modules manufactured by Infineon Technologies. It represents a generation of products designed for robust industrial applications, offering a balance between conduction losses and switching speeds through its specific semiconductor architecture.
Replacement Considerations
FF200R12KE3
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current is 400 A for a pulse duration of 1 ms.
What is the isolation test voltage rating?
The module supports an isolation test voltage of 2.5 kV RMS at 50 Hz for one minute.
What is the typical gate charge value?
The typical gate charge is 1.90 µC when measured between -15 V and +15 V.
