FF200R12KS4PHOSA1

Overview

The FF200R12KS4PHOSA1 is a 62mm C-Series half-bridge IGBT module utilizing fast IGBT2 technology for high-frequency switching. It features an isolated copper baseplate and pre-applied thermal interface material. The collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current (ICDC) of 200 A at TH = 45°C and Tvj max = 150°C. The repetitive peak collector current (ICRM) reaches 400 A. Key electrical parameters include a typical VCEsat of 3.20 V at Tvj = 25°C and a forward voltage (VF) of 2.00 V for the integrated diode. The junction-to-heatsink thermal resistance (RthJH) is 0.113 K/W per IGBT.

Feature Summary

• High short-circuit capability with self-limiting short circuit current
• Low switching losses and unbeatable robustness
• Collector-emitter saturation voltage (VCEsat) with positive temperature coefficient
• Package with CTI > 400 and high creepage and clearance distances

Applications

• Resonant inverter applications
• High frequency switching applications
• Medical applications
• Motor drives
• Servo drives
• UPS systems

Procurement Notes

Verify the specific ordering suffix PHOSA1 against official Infineon documentation to confirm exact manufacturing details and compliance status. Ensure that the pre-applied thermal interface material requirements are met during storage and installation procedures as outlined in application notes. Confirm mechanical mounting torque specifications for M6 screws before assembly.

Selection Notes

Select this module for designs requiring high power density and robust performance in resonant or high-frequency inverter topologies. The 62mm form factor supports up to 200 A continuous current. Evaluate the thermal resistance values and stray inductance characteristics to ensure compatibility with the intended gate drive and cooling system constraints.

Part Context

This component belongs to the Infineon 62mm C-Series, designed specifically for high-frequency switching using fast IGBT2 technology. It integrates both an IGBT switch and a freewheeling diode in a single half-bridge configuration. The series is characterized by its isolated baseplate construction and standardized housing dimensions suitable for industrial power conversion systems.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific IGBT2 chip technology or the pre-applied thermal interface material characteristics required for optimal thermal performance.

FAQ

What is the maximum short-circuit withstand time?

The module can withstand a short circuit for a duration of tP ≤ 10 µs under specified conditions.

Does the module include thermal interface material?

Yes, the module comes with pre-applied thermal interface material from Infineon.

What is the isolation test voltage?

The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.