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Product Detailed Parameters
- Description：IGBT MODULE 1200V 1050W
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：-
- Power - Max：1050 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：14 nF @ 25 V
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Overview
The FF200R12KT3EHOSA1 is a 62mm C-series IGBT module with common emitter topology. It features a collector-emitter voltage of 1200 V and continuous DC collector current ratings of 200 A at TC=80°C and 295 A at TC=25°C. The maximum repetitive peak collector current is 400 A. Collector-emitter saturation voltage ranges from 1.70 V to 2.15 V depending on temperature. Total power dissipation is 1050 W at TC=25°C. Gate-emitter peak voltage is +/-20 V. Operating junction temperature spans -40°C to 125°C. Thermal resistance from junction to case is 0.12 K/W per IGBT and 0.20 K/W per diode.
Feature Summary
- Utilizes Trenchstop IGBT3 technology for optimized switching performance.
- Features a robust copper baseplate for efficient thermal management.
- Includes an integrated NTC thermistor for precise temperature monitoring.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix HOSA1 against official Infineon documentation to confirm RoHS compliance status and material content declarations. Ensure that the ordering code matches the exact technical specifications required for the target application, as minor variations in suffixes can indicate differences in packaging or environmental certifications.
Selection Notes
Select this component based on the 1200 V blocking capability and 200 A nominal current rating suitable for medium-power industrial applications. Consider the thermal resistance values when designing the heatsink interface. Verify that the gate drive circuitry can accommodate the specified gate charge and internal gate resistor values for optimal switching speed control.
Part Context
This module belongs to Infineon's 62mm C-series family, designed for high-density power conversion. It integrates both an IGBT switch and a freewheeling diode in a single common emitter package. The series is known for its balance between electrical performance and thermal efficiency in industrial environments.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Direct replacements must match the 62mm footprint, 1200 V rating, and similar current capabilities. Verify pinout compatibility and thermal characteristics before substitution.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 400 A for a pulse duration of 1 ms.
What is the isolation test voltage?
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
What is the typical forward voltage of the integrated diode?
The forward voltage (VF) of the diode is typically 1.65 V at Tvj=25°C and IF=200 A, increasing to 2.15 V at Tvj=125°C.
